Area of research
Biomedical Engineering · Electrical and Electronic Engineering
Research interest
Research topics from publications: Dynamic Electronic Junctions in Organic–Inorganic Hybrid Perovskites; Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient; Robust Gapless Surface State against Surface Magnetic Impurities on (Bi0.5Sb0.5)2</mm; Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient; Controlled Fabrication of DNA Molecular Templates for In Situ Formation and Measurement of Ultrathin Metal Nanostructures; Modulation of electronic properties of tin oxide nanobelts via thermal control of surface oxygen defects. Representative work: Organic–inorganic hybrid perovskites have shown great potential as building blocks for low-cost optoelectronics for their exceptional optical and electrical properties. Despite the remarkable progress in device demonstration, fundamental understanding of the physical processes in halide perovskites remains limited, especially the unusual electronic behaviors such as the current–voltage hysteresis and the switchable photovoltaic effect. These phenomena are of particular interests for being closely related to device functionalities and performance. In this work, a microscopic picture of electric fields in halide perovskite thin films was obtained using scanning laser microscopy. Unlike convent In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a ch
Robust Gapless Surface State against Surface Magnetic Impurities on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mo stretchy="false">(</mml:mo><mml:msub><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Sb</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mo stretchy="false">)</mml:mo></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mm
Controlled Fabrication of DNA Molecular Templates for <i>In Situ</i> Formation and Measurement of Ultrathin Metal Nanostructures
Electrical Spin Injection and Detection in Silicon Nanowires with Axial Doping Gradient
Dynamic Electronic Junctions in Organic–Inorganic Hybrid Perovskites
Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient
Modulation of electronic properties of tin oxide nanobelts via thermal control of surface oxygen defects