Area of research
Condensed Matter Physics · Electrical and Electronic Engineering
Research interest
Research interests include GaN-based semiconductor devices and materials, Radio Frequency Integrated Circuit Design, Ga2O3 and related materials, and Acoustic Wave Resonator Technologies.
AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz
N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates
RF operation of AlN/Al<sub>0.25</sub>Ga<sub>0.75</sub>N/AlN HEMTs with f <sub> T </sub>/f <sub>max</sub> of 67/166 GHz
Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
Next generation electronics on the ultrawide-bandgap aluminum nitride platform
Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
First RF Power Operation of AlN/GaN/AlN HEMTs With >3 A/mm and 3 W/mm at 10 GHz
GaN/AlN p-channel HFETs with I<sub>max</sub> >420 mA/mm and ~20 GHz f<sub>T</sub> / f<sub>MAX</sub>
High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs