Area of research
Electronic, Optical and Magnetic Materials · Materials Chemistry
Research interest
Research interests include Ga2O3 and related materials, ZnO doping and properties, Advanced Photocatalysis Techniques, and Electronic and Structural Properties of Oxides.
Low <i>Q<sub>C</sub>V<sub>F</sub> </i> 20 A/1.4 kV <i>β</i>-Ga₂O₃ Vertical Trench High-k RESURF Schottky Barrier Diode With Turn-On Voltage of 0.5 V
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
Ultra-low reverse leakage in large area kilo-volt class <i>β</i> -Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
High-Mobility Tri-Gate β-Ga<sub>2</sub>O<sub>3</sub> MESFETs With a Power Figure of Merit Over 0.9 GW/cm<sup>2</sup>
4.4 kV β-Ga<sub>2</sub>O<sub>3</sub> MESFETs with power figure of merit exceeding 100 MW cm<sup>−2</sup>
Low Resistance Ohmic Contact on Epitaxial MOVPE Grown β-Ga<sub>2</sub>O<sub>3</sub> and β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> Films
Multi-kV Class <i>β</i>-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²