Area of research
Condensed Matter Physics · Electronic, Optical and Magnetic Materials
Research interest
Research interests include Materials science, Optoelectronics, Triboelectric effect, Light-emitting diode, Nanogenerator, and Diode.
Defect passivation of SnO<sub>2</sub> doped with 2-FN for high-performance perovskite detectors
Effects of terbium doping on the structural and optical properties of Ga2O3 films after high temperature annealing
Dual-coupling effect enables a high-performance self-powered UV photodetector
Enhanced performance of Cu/P-type GaN triboelectric nanogenerator through heterojunction
Enhancing power density in D-mode GaN HEMT direct-current triboelectric nanogenerators through ICP-etched surface engineering
Thickness dependence of PbZr0.52Ti0.48O3 thin film ferroelectric parameters
Metal-semiconductor direct-current triboelectric nanogenerator based on depletion mode u-GaN/AlGaN/AlN/GaN HEMT
Defect Behavior on the Degradation of AlGaN-Based 234 nm LEDs
AlGaN‐Based Solar‐Blind Ultraviolet Detector with a Response Wavelength of 217 nm
Improved detection performance of self-driven InZnO / p-GaN heterojunction UV photodetector by lanthanum doping
High current implementation of Cu/P-type GaN triboelectric nanogenerator
Friction-Dominated Carrier Excitation and Transport Mechanism for GaN-Based Direct-Current Triboelectric Nanogenerators
Recent Advances in Packaging Technologies of AlGaN‐Based Deep Ultraviolet Light‐Emitting Diodes
Direct-Current Triboelectric Nanogenerators Based on Semiconductor Structure
A Cu/P-type GaN triboelectric nanogenerator with power density over 100 W/m2
Variable temperature thermal droop characteristics of 255 nm UV LED
Enhanced Heat Dissipation in Gallium Nitride-Based Light-Emitting Diodes by Piezo-phototronic Effect
Characterization and simulation of 280 nm UV-LED degradation
Degradation analysis with characteristics and simulations of 265 nm UV-C LED
Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs
The fabrication of AlN by hydride vapor phase epitaxy