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Huipeng Chen

University of Tennessee at Knoxville · US
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Area of research
Electrical and Electronic Engineering · Polymers and Plastics
Research interest
Research interests include Materials science, Neuromorphic engineering, Optoelectronics, Transistor, Computer science, and Heterojunction.
h-index
citations
1,184
works
22
NIH funding
primary concept
email

Recent publications

Toward grouped-reservoir computing: organic neuromorphic vertical transistor with distributed reservoir states for efficient recognition and prediction
Nature Communications 2024cited by 74position: lastdoi
Solution‐Processed Ultralow Voltage Organic Transistors With Sharp Switching for Adaptive Visual Perception
Advanced Materials 2024cited by 46position: middledoi
Feedforward Photoadaptive Organic Neuromorphic Transistor with Mixed‐Weight Plasticity for Augmenting Perception
Advanced Functional Materials 2024cited by 38position: lastdoi
Inorganic Halide Perovskite Nanowires/Conjugated Polymer Heterojunction-Based Optoelectronic Synaptic Transistors for Dynamic Machine Vision
Nano Letters 2024cited by 33position: middledoi
Towards mixed physical node reservoir computing: light-emitting synaptic reservoir system with dual photoelectric output
Light Science & Applications 2024cited by 30position: lastdoi
Bipolar synaptic organic/inorganic heterojunction transistor with complementary light modulation and low power consumption for energy-efficient artificial vision systems
Science China Materials 2024cited by 25position: middledoi
Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor
International Journal of Extreme Manufacturing 2024cited by 23position: lastdoi
Multi‐Factor Modulated Organic Bulk Heterojunction Synaptic Transistor Enabled by Ligand Engineering for Centrosymmetric In‐Sensor Computing
Advanced Functional Materials 2024cited by 21position: lastdoi
Fully printed IGZO memristor arrays with robust threshold switching characteristics for artificial nociceptors
Science China Materials 2024cited by 14position: middledoi
Memristor-based in-situ convolutional strategy for accurate braille recognition
Science China Materials 2024cited by 8position: lastdoi
High‐Contrast Bidirectional Optoelectronic Synapses based on 2D Molecular Crystal Heterojunctions for Motion Detection
Advanced Materials 2023cited by 113position: lastdoi
Stretchable Transistor‐Structured Artificial Synapses for Neuromorphic Electronics
Small 2023cited by 80position: middledoi
Elastic Semiconductor Blends with High Strain Cycling Durability Using an Oligothiophene-Based Multiblock Polyurethane Matrix
Macromolecules 2023cited by 23position: middledoi
High-Performance n-Type Stretchable Semiconductor Blends for Organic Thin-Film Transistors and Artificial Synapses
Chemistry of Materials 2023cited by 21position: middledoi
Programmable ferroelectric bionic vision hardware with selective attention for high-precision image classification
Nature Communications 2022cited by 125position: lastdoi
Negative Phototransistors with Ultrahigh Sensitivity and Weak‐Light Detection Based on 1D/2D Molecular Crystal p–n Heterojunctions and their Application in Light Encoders
Advanced Materials 2022cited by 82position: middledoi
Multifunctional MoTe<sub>2</sub> Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping
Advanced Functional Materials 2022cited by 78position: middledoi
Ultralow‐Power Vertical Transistors for Multilevel Decoding Modes
Advanced Materials 2022cited by 58position: middledoi
Bioinspired Artificial Motion Sensory System for Rotation Recognition and Rapid Self-Protection
ACS Nano 2022cited by 40position: lastdoi
Band‐tailored van der Waals heterostructure for multilevel memory and artificial synapse
InfoMat 2021cited by 128position: middledoi
Controlling Native Oxidation of HfS<sub>2</sub> for 2D Materials Based Flash Memory and Artificial Synapse
ACS Applied Materials & Interfaces 2021cited by 71position: middledoi
Enhanced Reliability of In–Ga–ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
IEEE Transactions on Electron Devices 2018cited by 53position: middledoi

Grants

No grants ingested yet.

Frequent collaborators

Enlong Li · Fudan University8 papers (2021–2024)Wenping Hu · Ministry of Education of the People's Republic of China7 papers (2022–2024) · 7 papers (2022–2024)Xianghong Zhang · Fudan University7 papers (2022–2024)Chenhui Xu · University of Wollongong5 papers (2023–2024)Wei Chen · National University of Singapore5 papers (2021–2024) · 5 papers (2022–2024) · 4 papers (2022–2024)Congyong Wang · National University of Singapore4 papers (2022–2024)Xiaoting Zhu · National University of Singapore3 papers (2022–2024)Tengyu Jin · National University of Singapore3 papers (2021–2022)Enlong Li · Fudan University3 papers (2022–2024)Wenwu Li · Fudan University3 papers (2022–2024)Jing Gao · National University of Singapore3 papers (2021–2022)Jishan Wu · Jiangnan University3 papers (2022–2024) · 3 papers (2023–2024) · 3 papers (2018–2024)Minrui Lian · National University of Singapore3 papers (2024–2024)Chunyan Chi · National University of Singapore2 papers (2023–2023)Yaqian Liu · Guangzhou University of Chinese Medicine2 papers (2022–2024)
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