Area of research
Condensed Matter Physics · Electronic, Optical and Magnetic Materials
Research interest
Research interests include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, and Semiconductor materials and devices.
Experimental estimation of electron–hole pair creation energy in <b>
<i>β</i>
</b>-Ga2O3
Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3
1 GeV proton damage in β-Ga2O3
Photosensitivity of Ga2O3 Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation
Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3
Defects at the surface of β-Ga2O3 produced by Ar plasma exposure
Hydrogen plasma treatment of <b>
<i>β</i>
</b>-Ga2O3: Changes in electrical properties and deep trap spectra
Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire
Electrical Properties, Deep Levels and Luminescence Related to Fe in Bulk Semi-Insulating β-Ga<sub>2</sub>O<sub>3</sub> Doped with Fe
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
Deep trap analysis in green light emitting diodes: Problems and solutions
Effects of Hydrogen Plasma Treatment Condition on Electrical Properties of β-Ga<sub>2</sub>O<sub>3</sub>