Heng Zhang

Dual Optimization of Internal Light Extraction and Hole Injection for High-Efficiency Quantum-Dot Light-Emitting Diodes

Regular Tandem Quantum Dot Light‐Emitting Diodes with over 51% External Quantum Efficiency for Next‐Generation Displays

Positive Aging‐Free SnO ₂ ‐Based Quantum Dot Light‐Emitting Diodes With Average External Quantum Efficiency Exceeding 24%

Solution-Processed 2D Titanium Carbide MXene Electrodes for Efficient Quantum Dot Light-Emitting Diodes

Synergistic Crystallization Regulation and Defect Passivation via Dual Additives for High-Efficiency Quasi-2D Perovskite Light-Emitting Diodes

Quantum Dot Light-Emitting Diodes with External Quantum Efficiency Exceeding 30% Enabled by a Crown Ether-Modified Electron Transport Layer

Self‐Assembled Monolayer Enables Hole Injection Layer‐Free Quantum‐Dot Light‐Emitting Diodes with Over 31% External Quantum Efficiency

220 V/50 Hz Compatible Bipolar Quantum‐Dot Light‐Emitting Diodes

Large-scale preparation of Sb ³⁺ -activated hybrid metal halides with efficient tunable emission from visible to near-infrared regions for advanced photonic applications

Carrier Dynamics in Quantum Dot Light‐Emitting Diodes: The Conversion between Electrons, Excitons, and Photons

Dual-Ligand Synergistic Passivation Strategy for High-Brightness Perovskite Quantum Dot Light-Emitting Diodes

Efficient and Stable Quantum‐Dot Light‐Emitting Diodes with Trilayer PIN Architecture

Over 30% Efficient Non‐Vacuum Quantum‐Dot Light‐Emitting Diode with a Bi‐Layer High‐Precision Patternable EGaIn Top Electrode

PIN quantum-dot LEDs with enhanced efficiency and stability enabled by bulk-heterojunction hole transport layer

Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer