Area of research
Electrical and Electronic Engineering · Electronic, Optical and Magnetic Materials
Research interest
Research interests include Materials science, Ferroelectricity, Perovskite (structure), Optoelectronics, Condensed matter physics, and Perpendicular.
Symmetry-dependent field-free switching of perpendicular magnetization
Wearable Tin‐Based Perovskite Solar Cells Achieved by a Crystallographic Size Effect
Flexible artificial synapse based on single-crystalline BiFeO3 thin film
Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO<sub>3</sub> (111) Thin Film
Atmospheric stable and flexible Sn-based perovskite solar cells via a bio-inspired antioxidative crystal template
Wearable Tin‐Based Perovskite Solar Cells Achieved by a Crystallographic Size Effect
Continuously controllable photoconductance in freestanding BiFeO3 by the macroscopic flexoelectric effect
Ferroic tunnel junctions and their application in neuromorphic networks
Electrical switching of perpendicular magnetization in a single ferromagnetic layer
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Strain Effect on Oxygen Evolution Reaction Activity of Epitaxial NdNiO<sub>3</sub> Thin Films
Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient
Epitaxial Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
Tuning Bifunctional Oxygen Electrocatalysts by Changing the A‐Site Rare‐Earth Element in Perovskite Nickelates
Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit
Control of Synaptic Plasticity Learning of Ferroelectric Tunnel Memristor by Nanoscale Interface Engineering
Ultrathin BaTiO<sub>3</sub>-Based Ferroelectric Tunnel Junctions through Interface Engineering
Functional ferroelectric tunnel junctions on silicon
PMMA interlayer-modulated memory effects by space charge polarization in resistive switching based on CuSCN-nanopyramids/ZnO-nanorods p-n heterojunction
Modulation of Surface Trap Induced Resistive Switching by Electrode Annealing in Individual PbS Micro/Nanowire-Based Devices for Resistance Random Access Memory