Area of research
Condensed Matter Physics · Electrical and Electronic Engineering
Research interest
Research interests include GaN-based semiconductor devices and materials, Semiconductor materials and devices, Ga2O3 and related materials, and Acoustic Wave Resonator Technologies.
Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers
Wafer-scale bonded GaN–AlN with high interface thermal conductance
Imaging hot photocarrier transfer across a semiconductor heterojunction with ultrafast electron microscopy
Thin-Film Lithium Niobate Acoustic Resonator with High Q of 237 and k<sup>2</sup> of 5.1% at 50.74 GHz
Thin-Film Lithium Niobate Acoustic Filter at 23.5 GHz With 2.38 dB IL and 18.2% FBW
High figure of merit extreme bandgap Al<sub>0.87</sub>Ga<sub>0.13</sub>N-Al<sub>0.64</sub>Ga<sub>0.36</sub>N heterostructures over bulk AlN substrates
Trilayer Periodically Poled Piezoelectric Film Lithium Niobate Resonator
Optimization of chemical mechanical polishing of (010) β-Ga2O3
57 GHz Acoustic Resonator with k<sup>2</sup> of 7.3 % and Q of 56 in Thin-Film Lithium Niobate
Surface Reconstruction of Halide Perovskites During Post-treatment
High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films
High thermal conductivity and thermal boundary conductance of homoepitaxially grown gallium nitride (GaN) thin films
Experimental observation of high intrinsic thermal conductivity of AlN
Solid-phase hetero epitaxial growth of α-phase formamidinium perovskite
Thermal Transport across Ion-Cut Monocrystalline β-Ga<sub>2</sub>O<sub>3</sub> Thin Films and Bonded β-Ga<sub>2</sub>O<sub>3</sub>–SiC Interfaces