← back to search

Patrick Amsalem

Humboldt-Universität zu Berlin · DE
Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include Molecular Junctions and Nanostructures, 2D Materials and Applications, Organic Electronics and Photovoltaics, and Perovskite Materials and Applications.
h-index
30
citations
2,750
works
105
NIH funding
primary concept
email

Recent publications

Investigation on the Structure–Function Relationship of Atomic-Layer-Deposited Platinum Additives on Tungsten Trioxide Gas Sensor Materials
The Journal of Physical Chemistry C 2025cited by 4position: middledoi
Light-Induced Electronic Band Realignment at the Metal Halide Perovskite/Monolayer MoS<sub>2</sub> Heterojunction
ACS Applied Materials & Interfaces 2025cited by 3position: middledoi
The Impact of Gas Cluster Ion Beam Sputtering on the Chemical and Electronic Structure of Methyl Ammonium Lead Iodide Thin Films
Advanced Materials Interfaces 2025cited by 3position: middledoi
Breaking Barriers: Centimeter‐Sized Single Layer WSe<sub>2</sub> by Gold‐Mediated Exfoliation for Ambipolar Field Effect Transistors at Ultra‐Low Voltages
Advanced Electronic Materials 2025cited by 2position: middledoi
Activating Ru in the pyramidal sites of Ru <sub>2</sub> P‐type structures with earth‐abundant transition metals for achieving extremely high HER activity while minimizing noble metal content
Carbon Energy 2024cited by 26position: middledoi
Synthesis of two-dimensional triazine covalent organic frameworks at ambient conditions to detect and remove water pollutants
Environmental Research 2023cited by 10position: middledoi
Charge Selective Contacts to Metal Halide Perovskites Studied with Photoelectron Spectroscopy: X‐Ray, Ultraviolet, and Visible Light Induced Energy Level Realignment
Advanced Materials Interfaces 2023cited by 7position: middledoi
Tuning the Surface Electron Accumulation Layer of In<sub>2</sub>O<sub>3</sub> by Adsorption of Molecular Electron Donors and Acceptors
Small 2023cited by 5position: middledoi
Role of Heterojunctions of Core–Shell Heterostructures in Gas Sensing
ACS Applied Materials & Interfaces 2022cited by 44position: middledoi
The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening
ACS Nano 2021cited by 70position: middledoi
Type‐I Energy Level Alignment at the PTCDA—Monolayer MoS<sub>2</sub> Interface Promotes Resonance Energy Transfer and Luminescence Enhancement
Advanced Science 2021cited by 36position: middledoi
Two-dimensional plasmonic polarons in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math>-doped monolayer <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
Physical review. B./Physical review. B 2021cited by 32position: middledoi
Direct growth of crystalline triazine-based graphdiyne using surface-assisted deprotection–polymerisation
Chemical Science 2021cited by 16position: middledoi
Energy Level Alignment at the C<sub>60</sub>/Monolayer‐WS<sub>2</sub> Interface on Insulating and Conductive Substrates
Advanced Electronic Materials 2021cited by 11position: middledoi
The Importance of Ligand Selection on the Formation of Metal Phosphonate-Derived CoMoP and CoMoP <sub>2</sub> Nanoparticles for Catalytic Hydrogen Evolution
ACS Applied Nano Materials 2020cited by 31position: middledoi
Position-locking of volatile reaction products by atmosphere and capping layers slows down photodecomposition of methylammonium lead triiodide perovskite
RSC Advances 2020cited by 22position: middledoi
Morphology-controlled MoS<sub>2</sub> by low-temperature atomic layer deposition
Nanoscale 2020cited by 19position: middledoi
Energy-Level Alignment Tuning at Tetracene/c-Si Interfaces
The Journal of Physical Chemistry C 2020cited by 18position: middledoi
Substrate-Independent Energy-Level Pinning of an Organic Semiconductor Providing Versatile Hole-Injection Electrodes
ACS Applied Electronic Materials 2020cited by 10position: middledoi
Constructing the Electronic Structure of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> and CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> Perovskite Thin Films from Single-Crystal Band Structure Measurements
The Journal of Physical Chemistry Letters 2019cited by 93position: middledoi
Directional Charge Transport in Layered Two‐Dimensional Triazine‐Based Graphitic Carbon Nitride
Angewandte Chemie International Edition 2019cited by 89position: middledoi
Unraveling the Electronic Properties of Lead Halide Perovskites with Surface Photovoltage in Photoemission Studies
ACS Applied Materials & Interfaces 2019cited by 67position: middledoi
Demonstration of the key substrate-dependent charge transfer mechanisms between monolayer MoS2 and molecular dopants
Communications Physics 2019cited by 66position: middledoi
Zn<sub>0.35</sub>Co<sub>0.65</sub>O – A Stable and Highly Active Oxygen Evolution Catalyst Formed by Zinc Leaching and Tetrahedral Coordinated Cobalt in Wurtzite Structure
Advanced Energy Materials 2019cited by 54position: middledoi
A Self-Limited Atomic Layer Deposition of WS<sub>2</sub> Based on the Chemisorption and Reduction of Bis(<i>t</i>-butylimino)bis(dimethylamino) Complexes
Chemistry of Materials 2019cited by 27position: middledoi
Electronic band dispersion determination in azimuthally disordered transition-metal dichalcogenide monolayers
Communications Physics 2019cited by 18position: middledoi
<i>Operando</i> diffuse reflectance UV-vis spectroelectrochemistry for investigating oxygen evolution electrocatalysts
Catalysis Science & Technology 2019cited by 18position: middledoi
Directional Charge Transport in Layered Two‐Dimensional Triazine‐Based Graphitic Carbon Nitride
Angewandte Chemie 2019cited by 17position: middledoi
Direct determination of monolayer MoS<sub>2</sub>and WSe<sub>2</sub>exciton binding energies on insulating and metallic substrates
2D Materials 2018cited by 198position: middledoi
A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors
Scientific Reports 2018cited by 38position: middledoi

Grants

No grants ingested yet.

Frequent collaborators

Norbert Koch · Helmholtz-Zentrum Berlin für Materialien und Energie49 papers (2012–2025)Thorsten Schultz · Helmholtz-Zentrum Berlin für Materialien und Energie17 papers (2017–2024)Nicola Pinna · Humboldt-Universität zu Berlin12 papers (2016–2025)Fengshuo Zu · Helmholtz-Zentrum Berlin für Materialien und Energie10 papers (2017–2025)Dongguen Shin · Chonnam National University6 papers (2020–2025)Lain‐Jong Li · National University of Singapore6 papers (2017–2021)Xiaomin Xu · Shenzhen Institute of Information Technology6 papers (2019–2021)Areej Aljarb · King Abdullah University of Science and Technology6 papers (2018–2021)Georg Heimel · Humboldt-Universität zu Berlin5 papers (2013–2017)Emil List · Helmholtz-Zentrum Berlin für Materialien und Energie5 papers (2018–2025)Soohyung Park · Pohang University of Science and Technology5 papers (2018–2021)Muhammad Hamid Raza · Helmholtz-Zentrum Berlin für Materialien und Energie5 papers (2018–2025)Rongbin Wang · University of Turku5 papers (2017–2025)Raphael Schlesinger · Humboldt-Universität zu Berlin4 papers (2012–2017)Maryline Ralaiarisoa · Centre National de la Recherche Scientifique4 papers (2017–2019)Martin Oehzelt · Helmholtz-Zentrum Berlin für Materialien und Energie4 papers (2013–2016)Vincent Tung · Tokyo University of Science4 papers (2019–2021)Sylke Blumstengel · Humboldt-Universität zu Berlin4 papers (2018–2025)Sayed M. El‐Refaei · Max Planck Institute for Chemical Energy Conversion4 papers (2019–2024)Jens Niederhausen · Physikalisch-Technische Bundesanstalt4 papers (2012–2020)