Area of research
Materials Chemistry · Electronic, Optical and Magnetic Materials
Research interest
Research interests include Materials science, Piezoelectricity, Ferroelectricity, Condensed matter physics, Resistive random-access memory, and Optoelectronics.
Biocompatible piezoelectric lattice materials with ultrasound-regulated multimodal responses
Highly heterogeneous epitaxy of flexoelectric BaTiO3-δ membrane on Ge
Recent Advances in Piezoelectric Materials for Electromechanical Transducer Applications
Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection
Phase Change Random Access Memory for Neuro‐Inspired Computing
Toward a Reliable Synaptic Simulation Using Al-Doped HfO<sub>2</sub> RRAM
Periodic Wrinkle‐Patterned Single‐Crystalline Ferroelectric Oxide Membranes with Enhanced Piezoelectricity
Low-damping flexible Y<sub>3</sub>Fe<sub>5</sub>O<sub>12</sub> thin films for tunable RF/microwave processors
Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation
Giant Piezoelectricity of Ternary Perovskite Ceramics at High Temperatures
Localized polarons and conductive charge carriers: Understanding <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>CaCu</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi>Ti</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>12</mml:mn></mml:msub></mml:mrow></mml:math> over a broad temperature range
Interface-engineered reliable HfO<sub>2</sub>-based RRAM for synaptic simulation
The relation of local order to material properties in relaxor ferroelectrics
Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy
Low voltage induced reversible magnetoelectric coupling in Fe<sub>3</sub>O<sub>4</sub> thin films for voltage tunable spintronic devices
The origin of ultrahigh piezoelectricity in relaxor-ferroelectric solid solution crystals