M. Aldegunde

Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations

Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Simulation study of scaled In_0.53Ga_0.47As and Si FinFETs for sub-16 nm technology nodes

Scaling/LER study of Si GAA nanowire FET using 3D Finite Element Monte Carlo simulations

3D MC simulations of strain, channel orientation, and quantum confinement effects in nanoscale Si SOI FinFETs

Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts

Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

Multi-subband interface roughness scattering using 2D finite element schodinger equation for monte carlo simulations of multi-gate transistors

The effect of interface roughness scattering on Si SOI FinFET with Ando's and extended Prange and Nee model

Anisotropic schrodinger equation quantum corrections for 3D Monte Carlo simulations of nanoscale multigate transistors

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETs

Statistical study of the influence of LER and MGG in SOI MOSFET

Quantum transport of a nanowire field-effect transistor with complex phonon self–energy

Multi-scale simulations of a Mo/<i>n</i>⁺–GaAs Schottky contact for nano-scale III–V MOSFETs

Study of Local Power Dissipation in Ultrascaled Silicon Nanowire FETs

Causal self-energies for NEGF modelling of quantum nanowires

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes

Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET

Variability characterisation of nanoscale Si and InGaAs FinFETs at subthreshold

Scaling of metal gate workfunction variability in nanometer SOI-FinFETs

MC/DD study of metal grain induced current variability in a nanoscale InGaAs FinFET

3D Monte Carlo study of scaled SOI FinFETs using 2D Schr&amp;#x00F6;dinger quantum corrections

Impact of lateral doping profiles on ultra-scaled Trigate FinFETs

Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulations

Multi-scale simulations of metal-semiconductor contacts for nano-MOSFETs

3D Finite Element Schr&amp;#x00F6;dinger equation corrected Monte Carlo simulations of nanoscale FinFETs