Area of research
Electrical and Electronic Engineering · Atomic and Molecular Physics, and Optics
Research interest
Research interests include Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies, and Integrated Circuits and Semiconductor Failure Analysis.
A Comprehensive Analysis of the MOSFET Model
On the Log-Linear Inversion-Charge Relation for MOSFET Modeling
Fundamentals of Modern VLSI Devices
An Above Threshold Model for Short-Channel DG MOSFETs
A Non-GCA DG MOSFET Model Continuous into the Velocity Saturation Region
Analysis of Short-Channel Effects in Junctionless DG MOSFETs
Reduction of TFET OFF-Current and Subthreshold Swing by Lightly Doped Drain
Short-Channel Effects in Tunnel FETs
A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors
Comprehensive Analysis of Short-Channel Effects in Ultrathin SOI MOSFETs
Review and Critique of Analytic Models of MOSFET Short-Channel Effects in Subthreshold
Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion