Area of research
Atomic and Molecular Physics, and Optics · Materials Chemistry
Research interest
Research interests include Materials science, Condensed matter physics, Semimetal, Physics, Optoelectronics, and Molecular beam epitaxy.
Isotropic Dirac fermion and anomalous oscillator strength of the zeroth Landau level transition in LaAlSi
The discovery of three-dimensional Van Hove singularity
Forskolin-driven conversion of human somatic cells into induced neurons through regulation of the cAMP-CREB1-JNK signaling
Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta<sub>2</sub>NiS<sub>5</sub> Photodetector
The discovery of three-dimensional Van Hove singularity
Topological Lifshitz transition and one-dimensional Weyl mode in HfTe5
Tunable Terahertz Plasmons in Graphite Thin Films
The discovery of dynamic chiral anomaly in a Weyl semimetal NbAs
Ultrahigh conductivity in Weyl semimetal NbAs nanobelts
Quantum Hall effect based on Weyl orbits in Cd3As2
Three-dimensional Dirac semimetal thin-film absorber for broadband pulse generation in the near-infrared
Chiral Landau levels in Weyl semimetal NbAs with multiple topological carriers
Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy
A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions
Room-temperature chiral charge pumping in Dirac semimetals
Broadband hot-carrier dynamics in three-dimensional Dirac semimetal Cd3As2
Direct Observation of Landau Level Resonance and Mass Generation in Dirac Semimetal Cd<sub>3</sub>As<sub>2</sub> Thin Films
Zeeman splitting and dynamical mass generation in Dirac semimetal ZrTe5
Thickness-dependent quantum oscillations in Cd<sub>3</sub>As<sub>2</sub>thin films
ReS<sub>2</sub>‐Based Field‐Effect Transistors and Photodetectors
Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy
Spin-Valve Effect in NiFe/MoS<sub>2</sub>/NiFe Junctions
Gate-tunable quantum oscillations in ambipolar Cd3 As2 thin films
Controllable Growth of Vertical Heterostructure GaTe<sub><i>x</i></sub>Se<sub>1–<i>x</i></sub>/Si by Molecular Beam Epitaxy
Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe
Observations of a Metal–Insulator Transition and Strong Surface States in Bi<sub>2–<i>x</i></sub>Sb<i><sub>x</sub></i>Se<sub>3</sub> Thin Films