Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include Materials science, Optoelectronics, Neuromorphic engineering, Memristor, Atomic layer deposition, and Computer science.
Fluorine-Treated Top-Gate InAlZnO TFT for 2T0C DRAM With Long Data Retention at <i>V</i> <sub>hold</sub> = 0 V
Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel
Enhanced Ferroelectricity and Reliability in Sub-6 nm Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/ZrO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Stack Film Compatible with BEOL Process
High performance and nearly wake-up free Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> ferroelectric capacitor realized by middle layer strategy with BEOL compatibility
Back-End of Line Compatible Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> With ZrO<sub>2</sub> Seed Layer for Enhanced Ferroelectricity
Back-End of Line Compatible Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>/ZrO<sub>2</sub>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Stack Achieving 2P<sub>r</sub> of 39.6 μC/cm<sup>2</sup> and Endurance Exceeding 10<sup>10</sup> Cycles Under Low-Voltage Operation
Gate-Modulated High-Response Field-Effect Transistor-Type Gas Sensor Based on the MoS<sub>2</sub>/Metal–Organic Framework Heterostructure
Photoelectric Logic and <i>In Situ</i> Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots
Spectrum Reconstruction with Filter-Free Photodetectors Based on Graded-Band-Gap Perovskite Quantum Dot Heterojunctions
Flexible boron nitride-based memristor for<i>in situ</i>digital and analogue neuromorphic computing applications
Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application
High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing
Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application
Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation
Flexible <scp>3D</scp> memristor array for binary storage and multi‐states neuromorphic computing applications
Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique
Room-temperature developed flexible biomemristor with ultralow switching voltage for array learning
Atomic layer deposited 2D MoS2 atomic crystals: from material to circuit
Spectrum projection with a bandgap-gradient perovskite cell for colour perception
Fully transparent, flexible and waterproof synapses with pattern recognition in organic environments
Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
Ultra-low power Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> based ferroelectric tunnel junction synapses for hardware neural network applications
Recent Advances in β-Ga2O3–Metal Contacts
Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States
Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors
Investigation of the optical and electrical properties of ZnO/Cu/ZnO multilayers grown by atomic layer deposition
Oxygen-deficient WO<sub>3−x</sub>@TiO<sub>2−x</sub> core–shell nanosheets for efficient photoelectrochemical oxidation of neutral water solutions
Resistive Switching and Synaptic Behaviors of TaN/Al<sub>2</sub>O<sub>3</sub>/ZnO/ITO Flexible Devices With Embedded Ag Nanoparticles
Performance Improvement of Atomic Layer-Deposited ZnO/Al<sub>2</sub>O<sub>3</sub>Thin-Film Transistors by Low-Temperature Annealing in Air
High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator