Tsutomu Araki

Kinetics of indium adlayer and droplet on InGaN surface and their roles in InGaN growth

Misfit accommodation in a single interface atomic layer at a highly lattice-mismatched InN/GaN

Growth of high-quality InGaN thin films over whole In content range and evaluation of thermoelectric properties

Effect of carbon coating on surface structure in annealing process of high-dose implanted/annealed SiC

Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO₄ Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model

GaN thickness dependence of GaN/AlN superlattices on face-to-face-annealed sputter-deposited AlN templates

Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO₄ Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO₄ Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy

Heavy electron doping in monolayer MoS₂ on a freestanding N-face GaN substrate

Influence of HCl concentration in source solution and growth temperature on formation of <i>α</i>-Ga₂O₃ film via mist-CVD process

Direct growth of GaN film on ScAlMgO₄ substrate by radio-frequency plasma-excited molecular beam epitaxy

Control of Metal‐Rich Growth for GaN/AlN Superlattice Fabrication on Face‐to‐Face‐Annealed Sputter‐Deposited AlN Templates

Growth of Ga₂O₃ film on ScAlMgO₄ substrate by mist-chemical vapor deposition

Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO₄ by Radio‐Frequency Molecular Beam Epitaxy

Study of contact resistance of <i>α</i>-Ga₂O₃ on <i>m</i>-plane sapphire substrate with respect to Sn concentration using the circular transfer length method

Radio-frequency plasma-excited molecular beam epitaxy growth of GaN on graphene/Si(100) substrates