Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include Perovskite Materials and Applications, Quantum Dots Synthesis And Properties, Chalcogenide Semiconductor Thin Films, and Crystallization and Solubility Studies.
Thermally Robust AlScN Memristors With Thickness-Optimized Resistive Switching for Harsh Environment
Wafer-scale monolayer MoS<sub>2</sub> film integration for stable, efficient perovskite solar cells.
Unveiling the orientation growth mechanism and solar-blind response performance of β-Ga2O3 (100) film on SiC substrate with AlN buffer layer
Realizing giant ferroelectricity in stable wz-Al1−xBxN alloys by controlling the microstructure and elastic constant
Stable orthorhombic ferroelectric Hf0.5Zr0.5O2 films with platinum seed electrodes grown by sputtering
Large electronegativity differences between adjacent atomic sites activate and stabilize ZnIn2S4 for efficient photocatalytic overall water splitting
Homogeneous coverage of the low-dimensional perovskite passivation layer for formamidinium–caesium perovskite solar modules
Large electronegativity differences between adjacent atomic sites activate and stabilize ZnIn<sub>2</sub>S<sub>4</sub> for efficient photocatalytic overall water splitting.
Efficient perovskite solar modules with an ultra-long processing window enabled by cooling stabilized intermediate phases
Superior sodiophilicity and molecule crowding of crown ether boost the electrochemical performance of all-climate sodium-ion batteries
Surface Passivation with Tailoring Organic Potassium Salt for Efficient FAPbI<sub>3</sub> Perovskite Solar Cells and Modules
Inhibiting Ion Migration and Stabilizing Crystal‐Phase in Halide Perovskite via Directly Incorporated Fluoride Anion
High performance low power multilevel oxide based RRAM devices based on TiOxNy/Ga2O3 hybrid structure
Reversal barrier and ferroelectric polarization of strained wurtzite Al1−<i>x</i>Sc<i>x</i>N ferroelectric alloys
Metal-halide perovskites under pressure: Effect of anisotropic deformation on optoelectronic properties
Realizing Giant Ferroelectricity in Stable wz-Al1-xBxN Alloys by Controlling the Microstructure and Elastic Constant
Coexistence of Bipolar and Unipolar Resistive Switching Behavior in Amorphous Ga₂O₃ Based Resistive Random Access Memory Device
Identification of Trace Polystyrene Nanoplastics Down to 50 nm by the Hyphenated Method of Filtration and Surface-Enhanced Raman Spectroscopy Based on Silver Nanowire Membranes
Recent progress on the effects of impurities and defects on the properties of Ga<sub>2</sub>O<sub>3</sub>
Suppressed Dissolution and Enhanced Desolvation in Core–Shell MoO<sub>3</sub>@TiO<sub>2</sub> Nanorods as a High‐Rate and Long‐Life Anode Material for Proton Batteries
Structural characters and band offset of Ga2O3–Sc2O3 alloys
Synergistic effect of covalent functionalization and intrinsic electric field on β-Ga2O3/graphene heterostructures
Lead halide-templated crystallization of methylamine-free perovskite for efficient photovoltaic modules.
Synergistic Lewis acid-base sites of ultrathin porous Co3O4 nanosheets with enhanced peroxidase-like activity
Two-Dimensional (C<sub>6</sub>H<sub>5</sub>C<sub>2</sub>H<sub>4</sub>NH<sub>3</sub>)<sub>2</sub>PbI<sub>4</sub> Perovskite Single Crystal Resistive Switching Memory Devices
Aqueous Solution Derived Amorphous Indium Doped Gallium Oxide Thin-Film Transistors
Impurity level properties in transition metal doped
<i>α</i>
-Ga
<sub>2</sub>
O
<sub>3</sub>
for optoelectronic applications
Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors
Multilevel oxygen-vacancy conductive filaments in β-Ga<sub>2</sub>O<sub>3</sub> based resistive random access memory.
Microstructures and electronic characters of β-Ga<sub>2</sub>O<sub>3</sub> on different substrates: exploring the role of surface chemistry and structures.