Area of research
Materials Chemistry · Atomic and Molecular Physics, and Optics
Research interest
Research interests include Graphene, Materials science, Condensed matter physics, Monolayer, Scattering, and van der Waals force.
Imaging the sub-moiré potential using an atomic single electron transistor
Viscous terahertz photoconductivity of hydrodynamic electrons in graphene
Analytical Model for Atomic Relaxation in Twisted Moiré Materials
Controlled alignment of supermoire lattice in double-aligned graphene heterostructures
Geometric Control of Universal Hydrodynamic Flow in a Two-Dimensional Electron Fluid
Tunable Optical Properties of Thin Films Controlled by the Interface Twist Angle
Giant gate-tunable bandgap renormalization and excitonic effects in a 2D semiconductor
Dynamic band-structure tuning of graphene moiré superlattices with pressure
Electric-field-tuned topological phase transition in ultrathin Na3Bi
Tailoring sample-wide pseudo-magnetic fields on a graphene–black phosphorus heterostructure
Theoretical determination of hydrodynamic window in monolayer and bilayer graphene from scattering rates
Singlet superconductivity enhanced by charge order in nested twisted bilayer graphene Fermi surfaces
Moiré band model and band gaps of graphene on hexagonal boron nitride
Charge Puddles in Graphene near the Dirac Point
Quantum Transport and Observation of Dyakonov-Perel Spin-Orbit Scattering in Monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
Electronic Properties of High-Quality Epitaxial Topological Dirac Semimetal Thin Films
Origin of band gaps in graphene on hexagonal boron nitride
Local spectroscopy of moiré-induced electronic structure in gate-tunable twisted bilayer graphene
Interaction-Driven Metal-Insulator Transition in Strained Graphene
Transport and magnetotransport in three-dimensional Weyl semimetals
Transport Properties of Monolayer MoS<sub>2</sub> Grown by Chemical Vapor Deposition
van der Waals Force: A Dominant Factor for Reactivity of Graphene
Direct Imaging of Charged Impurity Density in Common Graphene Substrates