Area of research
Atomic and Molecular Physics, and Optics · Condensed Matter Physics
Research interest
Research interests include Materials science, Molecular beam epitaxy, Optoelectronics, Heterojunction, Quantum tunnelling, and Niobium nitride.
GaN/NbN epitaxial semiconductor/superconductor heterostructures
Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm2
Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
MBE-grown 232-270nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
Figshare 2017cited by 74position: middle
New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes
Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
Ag/HfO<inf>2</inf> based threshold switch with extreme non-linearity for unipolar cross-point memory and steep-slope phase-FETs
Comprehensive structural and optical characterization of MBE grown MoSe <sub>2</sub> on graphite, CaF <sub>2</sub> and graphene