Shu Shi

Approaching the Ideal Linearity in Epitaxial Crystalline‐Type Memristor by Controlling Filament Growth

Effective electrical manipulation of a topological antiferromagnet by orbital torques

Ferroelectric Control of Spin‐Orbitronics

Stabilizing the Ferroelectric Phase of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Hf</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi>Zr</mml:mi></mml:mrow><mml:mrow><mml:mn>0.5</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math> Thin Films by Charge Transfer

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Current-induced self-switching of perpendicular magnetization in CoPt single layer

A low-power Si:HfO2 ferroelectric tunnel memristor for spiking neural networks

Multifunctional MoTe₂ Fe‐FET Enabled by Ferroelectric Polarization‐Assisted Charge Trapping

Symmetry-dependent field-free switching of perpendicular magnetization

Spin–Orbit Torque‐Induced Domain Nucleation for Neuromorphic Computing

Flexible artificial synapse based on single-crystalline BiFeO3 thin film