Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include 2D Materials and Applications, Perovskite Materials and Applications, Semiconductor materials and devices, and Graphene research and applications.
Chemical Control of Zero-Phonon Line Wavelength in Diamond Color Centers for Telecom-Band Emission
Compatibility between Schottky–Mott Limit and High Carrier-Injection Efficiency in Metal–van der Waals Semiconductor Junctions
Dual-modification strategy for efficient inverted perovskite solar cells via thermally induced liquid crystals and boosting of phenethylammonium by carbazole
Physics-aware graph neural networks for automated tight-binding model construction in quantum transport simulations
TMDCs and related vdW-heterostructures: a gap analysis of hybrid synthesis and the realization of optimal properties for practical applications, current challenges, and future prospects
Roadblocks to ambient-pressure room-temperature superconductivity in lutetium hydrides
Theoretical explanation for doping dependence of lattice constants in Ge:B films: Revealing nanoscale impurity types from macroscopic perspective
Softening of the optical phonon by reduced interatomic bonding strength without depolarization
Nontrivial d-electrons driven superconductivity of transition metal diborides
Compositionally modulated perpendicular magnetic anisotropy in tetragonal Mn<i>x</i>Al films
Dynamical Symmetry-Reduction-Induced Giant Anharmonicity in IV–VI Compounds: Role of Cation Lone-Pair <i>s</i> Electrons
Carrier injection induced degradation of nitrogen passivated SiC–SiO2 interface simulated by time-dependent density functional theory
Surface in situ reconstruction of inorganic perovskite films enabling long carrier lifetimes and solar cells with 21% efficiency
Electrical and magnetic anisotropies in van der Waals multiferroic CuCrP<sub>2</sub>S<sub>6</sub>.
Dual-Level Enhanced Nonradiative Carrier Recombination in Wide-Gap Semiconductors: The Case of Oxygen Vacancy in SiO<sub>2</sub>
Author Correction: Surface in situ reconstruction of inorganic perovskite films enabling long carrier lifetimes and solar cells with 21% efficiency
Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO<sub>2</sub> interface
Investigation and passivation of boron and hydrogen impurities in tetragonal ZrO2 dielectrics for dynamic random access memory capacitors
Inactive (PbI <sub>2</sub> ) <sub>2</sub> RbCl stabilizes perovskite films for efficient solar cells
Inactive (PbI<sub>2</sub>)<sub>2</sub>RbCl stabilizes perovskite films for efficient solar cells.
Donor-Acceptor Pair Quantum Emitters in Hexagonal Boron Nitride.
Clarification of the relative magnitude of exciton binding energies in ZnO and SnO2
The mechanism of improving germanium metal–oxide–semiconductor field-effect transistors’ reliability by high-k dielectric and yttrium-doping: From the view of charge trapping
Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate
First-Principles Study of the Origin of the Distinct Conductivity Type of Monolayer MoSe<sub>2</sub> and WSe<sub>2</sub>
Band offset trends in IV-VI layered semiconductor heterojunctions.
Exploring the Metal-Insulator Transition in (Ga,Mn)As by Molecular Absorption.
Anisotropy in Multiferroic CuCrP2S6
Fundamental Identification of Defect‐Related Electron Trap in Hf<sub>1−<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub>Alloy Gate Dielectric on Silicon: Oxygen Vacancy versus Hydrogen Interstitial
Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films