Area of research
Electronic, Optical and Magnetic Materials · Condensed Matter Physics
Research interest
Research interests include Ga2O3 and related materials, GaN-based semiconductor devices and materials, ZnO doping and properties, and Video Coding and Compression Technologies.
Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy
RF operation of AlN/Al<sub>0.25</sub>Ga<sub>0.75</sub>N/AlN HEMTs with f <sub> T </sub>/f <sub>max</sub> of 67/166 GHz
Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions
Controlled Si doping of <b> <i>β</i> </b>-Ga2O3 by molecular beam epitaxy
Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning
Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa) <sub>2</sub> O <sub>3</sub> on m-plane sapphire
Thermal stability of epitaxial <i>α</i>-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire
Polarization-induced 2D hole gases in pseudomorphic undoped GaN/AlN heterostructures on single-crystal AlN substrates
Molecular beam homoepitaxy on bulk AlN enabled by aluminum-assisted surface cleaning
Surface control and MBE growth diagram for homoepitaxy on single-crystal AlN substrates