Area of research
Materials Chemistry · Electrical and Electronic Engineering
Research interest
Research focused on Heterojunction and Graphene, with related work in Wafer, Optoelectronics, Artificial neural network. Notable publications include 'Artificial optic-neural synapse for colored and color-mixed pattern recognition', 'Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition', and 'Non-epitaxial single-crystal 2D material growth by geometric confinement'.
Future trends of display technology: micro-LEDs toward transparent, free-form, and near-eye displays
Growth-based monolithic 3D integration of single-crystal 2D semiconductors
Junctionless Negative‐Differential‐Resistance Device Using 2D Van‐Der‐Waals Layered Materials for Ternary Parallel Computing
Non-epitaxial single-crystal 2D material growth by geometric confinement
A Van Der Waals Reconfigurable Multi‐Valued Logic Device and Circuit Based on Tunable Negative‐Differential‐Resistance Phenomenon
The <scp>SLC26A9</scp> inhibitor <scp>S9‐A13</scp> provides no evidence for a role of <scp>SLC26A9</scp> in airway chloride secretion but suggests a contribution to regulation of <scp>ASL pH</scp> and gastric proton secretion
An Optogenetics‐Inspired Flexible van der Waals Optoelectronic Synapse and its Application to a Convolutional Neural Network
Artificial van der Waals hybrid synapse and its application to acoustic pattern recognition
A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory
Ultrasensitive MoS2 photodetector by serial nano-bridge multi-heterojunction
Double Negative Differential Transconductance Characteristic: From Device to Circuit Application toward Quaternary Inverter
Artificial optic-neural synapse for colored and color-mixed pattern recognition
Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices
Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials
Extremely Large Gate Modulation in Vertical Graphene/WSe<sub>2</sub> Heterojunction Barristor Based on a Novel Transport Mechanism