Area of research
Electrical and Electronic Engineering · Condensed Matter Physics
Research interest
Research interests include GaN-based semiconductor devices and materials, Silicon Carbide Semiconductor Technologies, Ga2O3 and related materials, and Semiconductor materials and devices.
Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel
1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
Strained GaN quantum-well FETs on single crystal bulk AlN substrates
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <i>p-n</i> diodes with avalanche breakdown
1.7-kV and 0.55-$\text{m}\Omega \cdot \text {cm}^{2}$ GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon