← back to search

Yunfan Guo

Massachusetts Institute of Technology · US
Area of research
Materials Chemistry · Atomic and Molecular Physics, and Optics
Research interest
Research interests include Materials science, Janus, Heterojunction, Semiconductor, van der Waals force, and Molybdenum disulfide.
h-index
citations
1,287
works
12
NIH funding
primary concept
email

Recent publications

Achieving High-Yield Conversion of Janus Transition Metal Dichalcogenides on Diverse Substrates
ACS Nano 2025cited by 10position: lastdoi
Giant room-temperature nonlinearities in a monolayer Janus topological semiconductor
Nature Communications 2023cited by 47position: middledoi
Nonlinear Optical Responses of Janus MoSSe/MoS<sub>2</sub> Heterobilayers Optimized by Stacking Order and Strain
ACS Nano 2023cited by 26position: middledoi
Soft-lock drawing of super-aligned carbon nanotube bundles for nanometre electrical contacts
Nature Nanotechnology 2022cited by 51position: firstdoi
Healing of donor defect states in monolayer molybdenum disulfide using oxygen-incorporated chemical vapour deposition
Nature Electronics 2021cited by 131position: middledoi
Designing artificial two-dimensional landscapes via atomic-layer substitution
Proceedings of the National Academy of Sciences 2021cited by 98position: firstdoi
Spectroscopic Signatures of Interlayer Coupling in Janus MoSSe/MoS<sub>2</sub> Heterostructures
ACS Nano 2021cited by 82position: middledoi
Colossal switchable photocurrents in topological Janus transition metal dichalcogenides
npj Computational Materials 2021cited by 59position: middledoi
Two-dimensional halide perovskite lateral epitaxial heterostructures
Nature 2020cited by 460position: middledoi
Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe
Journal of the American Chemical Society 2020cited by 162position: middledoi
Additive manufacturing of patterned 2D semiconductor through recyclable masked growth
Proceedings of the National Academy of Sciences 2019cited by 59position: firstdoi
Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
Journal of the American Chemical Society 2018cited by 102position: middledoi

Grants

No grants ingested yet.

Frequent collaborators

Jing Kong · Tiangong University11 papers (2018–2025)Cong Su · Shandong University5 papers (2018–2021)Enzheng Shi · Iowa State University4 papers (2019–2023)Ang‐Yu Lu · Massachusetts Institute of Technology4 papers (2019–2022)Qingqing Ji · Massachusetts Institute of Technology4 papers (2018–2022)Pin‐Chun Shen · Massachusetts Institute of Technology4 papers (2018–2022)Ju Li · Zhejiang Chinese Medical University4 papers (2019–2023)Kunyan Zhang · University of California, Berkeley4 papers (2020–2025)Shengxi Huang · Massachusetts Institute of Technology3 papers (2020–2023)Tomás Palacios · Massachusetts Institute of Technology3 papers (2019–2022)Yuxuan Lin · Foshan University3 papers (2019–2022)Letian Dou · Davidson College3 papers (2019–2022)Efthimios Kaxiras · Harvard University2 papers (2020–2021)William A. Tisdale · Massachusetts Institute of Technology2 papers (2018–2021)Alexander A. Puretzky · Oak Ridge National Laboratory2 papers (2020–2023)David B. Geohegan · University of Tennessee at Knoxville2 papers (2020–2023)David A. Muller · Cornell University2 papers (2018–2019)Haozhe Wang · Massachusetts Institute of Technology2 papers (2018–2021)Yimo Han · Rice University2 papers (2018–2019)Haowei Xu · Massachusetts Institute of Technology2 papers (2021–2023)