Area of research
Electrical and Electronic Engineering · Cellular and Molecular Neuroscience
Research interest
Research interests include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, and Neuroscience and Neural Engineering.
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup/>
The Fluctuation Effect of Remnant Polarization in Hf₀.₅Zr₀.₅O₂ Capacitors at Elevated Temperatures
Giant electroresistance in hafnia-based ferroelectric tunnel junctions via enhanced polarization
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier<sup/>
Reversible fatigue-rejuvenation procedure and its mechanism in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>epitaxial films.
Performance Improvement of Memristor-Based Echo State Networks by Optimized Programming Scheme
Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging
One Transistor One Electrolyte‐Gated Transistor Based Spiking Neural Network for Power‐Efficient Neuromorphic Computing System
Evolution of the conductive filament system in HfO<sub>2</sub>-based memristors observed by direct atomic-scale imaging.
Identification of Ferroelectricity in a Capacitor With Ultra-Thin (1.5-nm) Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Film
High-Density 3-D Stackable Crossbar 2D2R nvTCAM With Low-Power Intelligent Search for Fast Packet Forwarding in 5G Applications
Quantitative Analysis on Resistance Fluctuation of Resistive Random Access Memory by Low Frequency Noise Measurement
Wake‐Up Effect in HfO<sub>2</sub>‐Based Ferroelectric Films
A highly CMOS compatible hafnia-based ferroelectric diode.
Ion‐Gated Transistor: An Enabler for Sensing and Computing Integration
A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme
Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga<sub>2</sub>O<sub>3</sub> Solar-Blind Photodetector With Asymmetric Schottky Electrodes
Enhancement-Mode $\beta$ -Ga<sub>2</sub>O<sub>3</sub> Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio
Fast Switching $\beta$ -Ga<sub>2</sub>O<sub>3</sub>Power MOSFET With a Trench-Gate Structure
Composition-Dependent Ferroelectric Properties in Sputtered Hf<sub>X</sub>Zr<sub>1−X</sub>O<sub>2</sub> Thin Films
A Self-Rectifying Resistive Switching Device Based on HfO<sub>2</sub>/TaO<inline-formula>
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Memory Switching and Threshold Switching in a 3D Nanoscaled NbO<sub>X</sub> System
Uniform, Fast, and Reliable Li<sub>x</sub>SiO<sub>y</sub>-Based Resistive Switching Memory
Recommended Methods to Study Resistive Switching Devices
Schottky Barrier Rectifier Based on (100) $\beta$ -Ga<sub>2</sub>O<sub>3</sub> and its DC and AC Characteristics
Characterization of the inhomogeneous barrier distribution in a Pt/(100)<i>β</i>-Ga2O3 Schottky diode via its temperature-dependent electrical properties
Schottky barrier diode based on <i>β</i>-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
Demonstration of 3D vertical RRAM with ultra low-leakage, high-selectivity and self-compliance memory cells