Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, and MXene and MAX Phase Materials.
A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability
Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells
Hourglass concept for RRAM: A dynamic and statistical device model
Role of the Ta scavenger electrode in the excellent switching control and reliability of a scalable low-current operated TiN\Ta<inf>2</inf>O<inf>5</inf>\Ta RRAM device
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
Dynamic &#x2018;hour glass&#x2019; model for SET and RESET in HfO<inf>2</inf> RRAM
Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures