Area of research
Electrical and Electronic Engineering · Atomic and Molecular Physics, and Optics
Research interest
Research interests include Resistive random-access memory, Materials science, Reset (finance), Physics, Optoelectronics, and Protein filament.
Low charge noise quantum dots with industrial CMOS manufacturing
Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer
Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
Ovonic Threshold‐Switching Ge<sub><i>x</i></sub>Se<sub><i>y</i></sub> Chalcogenide Materials: Stoichiometry, Trap Nature, and Material Relaxation from First Principles
Thermally stable integrated Se-based OTS selectors with >20 MA/cm<sup>2</sup> current drive, >3.10<sup>3</sup> half-bias nonlinearity, tunable threshold voltage and excellent endurance
First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device
Causes and consequences of the stochastic aspect of filamentary RRAM
Switching mechanism in two-terminal vanadium dioxide devices
One-Selector One-Resistor Cross-Point Array With Threshold Switching Selector
A-VMCO: A novel forming-free, self-rectifying, analog memory cell with low-current operation, nonfilamentary switching and excellent variability
High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application
High-Performance Metal-Insulator-Metal Tunnel Diode Selectors
Hourglass concept for RRAM: A dynamic and statistical device model
RRAMs based on anionic and cationic switching: a short overview
Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications
Selector design considerations and requirements for 1 SIR RRAM crossbar array
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Improvement of data retention in HfO<inf>2</inf>/Hf 1T1R RRAM cell under low operating current
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
Postcycling LRS Retention Analysis in HfO<sub>2</sub>/Hf RRAM 1T1R Device
Statistical insight into controlled forming and forming free stacks for HfOx RRAM
Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells
Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
Dynamic &#x2018;hour glass&#x2019; model for SET and RESET in HfO<inf>2</inf> RRAM
Understanding of the endurance failure in scaled HfO<inf>2</inf>-based 1T1R RRAM through vacancy mobility degradation
Intrinsic Switching Behavior in HfO2 RRAM by Fast Electrical Measurements on Novel 2R Test Structures
Analysis of Complementary RRAM Switching
Insights into Ni-filament formation in unipolar-switching Ni/HfO2/TiN resistive random access memory device