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Iuliana Radu

KU Leuven · BE
Area of research
Materials Chemistry · Electrical and Electronic Engineering
Research interest
Research interests include Materials science, Optoelectronics, Atomic layer deposition, Contact resistance, Chemical vapor deposition, and Nucleation.
h-index
citations
3,068
works
47
NIH funding
primary concept
email

Recent publications

Roadmap on low-power electronics
APL Materials 2024cited by 27position: lastdoi
Multiplexed superconducting qubit control at millikelvin temperatures with a low-power cryo-CMOS multiplexer
Nature Electronics 2023cited by 41position: middledoi
Complementary carbon nanotube metal–oxide–semiconductor field-effect transistors with localized solid-state extension doping
Nature Electronics 2023cited by 37position: middledoi
How to report and benchmark emerging field-effect transistors
Nature Electronics 2022cited by 172position: middledoi
Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
npj Quantum Information 2022cited by 44position: middledoi
Nanoscale domain wall devices with magnetic tunnel junction read and write
Nature Electronics 2021cited by 108position: middledoi
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
Scientific Reports 2021cited by 77position: lastdoi
Engineering Wafer-Scale Epitaxial Two-Dimensional Materials through Sapphire Template Screening for Advanced High-Performance Nanoelectronics
ACS Nano 2021cited by 56position: middledoi
Reconfigurable submicrometer spin-wave majority gate with electrical transducers
Science Advances 2020cited by 107position: middledoi
Introducing 2D-FETs in Device Scaling Roadmap using DTCO
2020cited by 46position: middledoi
Sources of variability in scaled MoS<sub>2</sub> FETs
2020cited by 22position: lastdoi
MoS<sub>2</sub>/MoTe<sub>2</sub> Heterostructure Tunnel FETs Using Gated Schottky Contacts
Advanced Functional Materials 2019cited by 76position: middledoi
Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors
ACS Nano 2018cited by 153position: middledoi
Understanding Energy Efficiency Benefits of Carbon Nanotube Field-Effect Transistors for Digital VLSI
IEEE Transactions on Nanotechnology 2018cited by 132position: middledoi
2D materials: roadmap to CMOS integration
2018cited by 96position: lastdoi
Formation mechanism of 2D SnS<sub>2</sub> and SnS by chemical vapor deposition using SnCl<sub>4</sub> and H<sub>2</sub>S
Journal of Materials Chemistry C 2018cited by 80position: middledoi
Two-Dimensional Crystal Grain Size Tuning in WS<sub>2</sub> Atomic Layer Deposition: An Insight in the Nucleation Mechanism
Chemistry of Materials 2018cited by 76position: middledoi
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
Nanotechnology 2018cited by 61position: lastdoi
Tunneling Transistors Based on MoS<sub>2</sub>/MoTe<sub>2</sub> Van der Waals Heterostructures
IEEE Journal of the Electron Devices Society 2018cited by 48position: lastdoi
Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS<sub>2</sub> from WF<sub>6</sub>, H<sub>2</sub> Plasma, and H<sub>2</sub>S
Chemistry of Materials 2017cited by 79position: middledoi
Electrically Driven Unidirectional Optical Nanoantennas
Nano Letters 2017cited by 67position: middledoi
From the metal to the channel: a study of carrier injection through the metal/2D MoS<sub>2</sub>interface
Nanoscale 2017cited by 67position: middledoi
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 2017cited by 41position: middledoi
MoS<sub>2</sub> Functionalization with a Sub-nm Thin SiO<sub>2</sub> Layer for Atomic Layer Deposition of High-κ Dielectrics
Chemistry of Materials 2017cited by 40position: middledoi
Micromagnetic simulations of magnetoelastic spin wave excitation in scaled magnetic waveguides
Applied Physics Letters 2017cited by 40position: middledoi
Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs
Scientific Reports 2017cited by 17position: middledoi
All electrical propagating spin wave spectroscopy with broadband wavevector capability
Applied Physics Letters 2016cited by 91position: lastdoi
Polarity control in WSe2 double-gate transistors
Scientific Reports 2016cited by 83position: middledoi
Multilayer MoS<sub>2</sub> growth by metal and metal oxide sulfurization
Journal of Materials Chemistry C 2016cited by 61position: middledoi
Nucleation and growth mechanisms of Al2O3 atomic layer deposition on synthetic polycrystalline MoS2
The Journal of Chemical Physics 2016cited by 60position: middledoi

Grants

No grants ingested yet.

Frequent collaborators

Marc Heyns · KU Leuven20 papers (2012–2022)Stefan De Gendt · KU Leuven13 papers (2012–2018) · 12 papers (2015–2021)Inge Asselberghs · KU Leuven12 papers (2015–2021) · 11 papers (2016–2021)Thierry Conard · KU Leuven10 papers (2012–2018)Matty Caymax · KU Leuven10 papers (2015–2021)Johan Meersschaut · KU Leuven9 papers (2012–2018)Wilfried Vandervorst · KU Leuven8 papers (2015–2018)Surajit Sutar · KU Leuven8 papers (2015–2021)H. Bender · KU Leuven8 papers (2012–2018)Quentin Smets · KU Leuven8 papers (2017–2021)Christoph Adelmann · KU Leuven7 papers (2012–2020)Ankit Nalin Mehta · KU Leuven7 papers (2017–2021)Yashwanth Balaji · KU Leuven7 papers (2015–2019)Daniele Chiappe · KU Leuven7 papers (2015–2018)Annelies Delabie · KU Leuven7 papers (2015–2018)Thomas Nuytten · KU Leuven7 papers (2015–2018)Benjamin Groven · KU Leuven7 papers (2015–2021)Goutham Arutchelvan · KU Leuven6 papers (2017–2021)