Area of research
Materials Chemistry · Electrical and Electronic Engineering
Research interest
Research interests include 2D Materials and Applications, Advanced Semiconductor Detectors and Materials, Semiconductor Quantum Structures and Devices, and Graphene research and applications.
Tellurium nanowire retinal nanoprosthesis improves vision in models of blindness
A multi-mode hybrid electric vehicle routing problem with time windows
WSe <sub>2</sub> pn Homojunction Photodetector Engineered by In Situ Ferroelectric Doping
Edge-Dominated Epitaxy of Topological Insulator Bi<sub>2</sub>Se<sub>3</sub> with Ultrabroadband Response
Spatial confined hot carrier dynamics for beyond unity quantum efficiency detection
Multitask Multiplexed Switchable Infrared Optoelectronic Detection Based on Band Switch
Stable b‐AsP/InSe Mid‐Infrared Detector with High Polarization‐Sensitivity for Target Feature Discrimination
Development of an integrated hydro-mechanical coupling test system for meter-scale fractured rock masses in laboratory
Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region
Two-dimensional materials for future information technology: status and prospects
Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation
Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector
Van der Waals mid-wavelength infrared detector linear array for room temperature passive imaging
Black Arsenic Phosphorus Mid‐Wave Infrared Barrier Detector with High Detectivity at Room Temperature
Tellurium/Bismuth Selenide van der Waals Heterojunction for Self‐Driven, Broadband Photodetection and Polarization‐Sensitive Application
Reconfigurable, non-volatile neuromorphic photovoltaics
Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives
Next‐Generation Photodetectors beyond Van Der Waals Junctions
Integrating <scp>2D</scp> layered materials with <scp>3D</scp> bulk materials as van der Waals heterostructures for photodetections: Current status and perspectives
Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains
Van der Waals two-color infrared photodetector
Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
Composition and phase engineering of metal chalcogenides and phosphorous chalcogenides
HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector
High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
Room-Temperature Blackbody-Sensitive and Fast Infrared Photodetectors Based on 2D Tellurium/Graphene Van der Waals Heterojunction
Macroscopic assembled graphene nanofilms based room temperature ultrafast mid‐infrared photodetectors
Pristine PN junction toward atomic layer devices
Unipolar barrier photodetectors based on van der Waals heterostructures