Area of research
Materials Chemistry · Electrical and Electronic Engineering
Research interest
Research interests include Optoelectronics, Materials science, Photodetector, Ferroelectricity, Responsivity, and Homojunction.
High-sensitivity GaN UV photodetector integrated with graphene
Bilateral Geiger mode avalanche in InSe Schottky photodiodes
Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector
Polarization photodetectors with configurable polarity transition enabled by programmable ferroelectric-doping patterns
Black Arsenic Phosphorus Mid‐Wave Infrared Barrier Detector with High Detectivity at Room Temperature
Interfaces in two-dimensional transistors: Key to pushing performance and integration
Ferroelectric field effect transistors for electronics and optoelectronics
Interface Engineering to Drive High‐Performance MXene/PbS Quantum Dot NIR Photodiode
Controllable Photocurrent Generation in Lateral Bilayer MoS<sub>2</sub>–WS<sub>2</sub> Heterostructure
Ultra-sensitive polarization-resolved black phosphorus homojunction photodetector defined by ferroelectric domains
HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector
Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains
Ultrasensitive negative capacitance phototransistors
MoTe<sub>2</sub> p–n Homojunctions Defined by Ferroelectric Polarization
Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector
Large‐area high quality PtSe<sub>2</sub> thin film with versatile polarity
Multimechanism Synergistic Photodetectors with Ultrabroad Spectrum Response from 375 nm to 10 µm
Controlled Doping of Wafer‐Scale PtSe<sub>2</sub> Films for Device Application
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe <sub>2</sub> channels
Two-dimensional negative capacitance transistor with polyvinylidene fluoride-based ferroelectric polymer gating
Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics