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David Hanggi

The Ohio State University · US
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Area of research
Nuclear and High Energy Physics · Electrical and Electronic Engineering
Research interest
Research interests include Laser-Plasma Interactions and Diagnostics, Laser-Matter Interactions and Applications, ZnO doping and properties, and Thin-Film Transistor Technologies.
h-index
2
citations
23
works
13
NIH funding
—
primary concept
—
email
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Recent publications

The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
Solid-State Electronics 2022cited by 6position: middledoi
Enhancement of electrical characteristics of a‐ZTO TFTs based on channel layers produced with alternating precursor concentration
Electronics Letters 2018cited by 2position: middledoi

Grants

No grants ingested yet.

Frequent collaborators

Michael C. Hamilton · Google (United States)2 papers (2018–2022)Vahid Mirkhani · Auburn University2 papers (2018–2022)Sunil Uprety · Auburn University2 papers (2018–2022)Mobbassar Hassan Sk · University of Cambridge2 papers (2018–2022)Min P. Khanal · Auburn University2 papers (2018–2022)Kosala Yapabandara · Auburn University2 papers (2018–2022)Min-Woo Park · Advanced Institute of Convergence Technology1 papers (2018–2018)Sarit Dhar · Auburn University1 papers (2018–2018)A. C. Ahyi · China National Administration of Coal Geology1 papers (2022–2022)Willis E. Hames · Auburn University1 papers (2018–2018)Benjamin Schoenek · Auburn University1 papers (2018–2018)M. Park · Auburn University1 papers (2022–2022)Shiqiang Wang · Auburn University1 papers (2018–2018)Sicong Wang · Dalian Ocean University1 papers (2022–2022)
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