Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research interests include ZnO doping and properties, Thin-Film Transistor Technologies, GaN-based semiconductor devices and materials, and Semiconductor materials and devices.
The effect of gamma-ray irradiation on the electrical characteristics of sol-gel derived zinc tin oxide thin film transistors
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors
On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO
Impact of 100 keV proton irradiation on electronic and optical properties of AlGaN/GaN high electron mobility transistors (HEMTs)
Proton-induced displacement damage in ZnO thin film transistors: Impact of damage location
Enhancement of electrical characteristics of a‐ZTO TFTs based on channel layers produced with alternating precursor concentration
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Electrical characteristics and density of states of thin-film transistors based on sol-gel derived ZnO channel layers with different annealing temperatures
Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers
Raman and X‐ray photoelectron spectroscopy investigation of the effect of gamma‐ray irradiation on MoS <sub>2</sub>
Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements
Analysis of the effect of gamma-ray irradiation and low-temperature characteristics of sol-gel derived ZnO thin-film transistors
Spectroscopic photo <i>I–V</i> diagnostics of nitride‐based high electron mobility transistor structures on Si wafers