Area of research
Atomic and Molecular Physics, and Optics · Civil and Structural Engineering
Research interest
Research interests include Strong Light-Matter Interactions, Thermal Radiation and Cooling Technologies, GaN-based semiconductor devices and materials, and Semiconductor materials and devices.
Engineering Vacancies for the Creation of Antisite Defects in Chemical Vapor Deposition Grown Monolayer MoS<sub>2</sub> and WS<sub>2</sub> via Proton Irradiation
High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors
On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO
Electrical and optical characteristics of gamma-ray irradiated AlGaN/GaN high electron mobility transistors
Study of device instability of bottom-gate ZnO transistors with sol–gel derived channel layers
Raman and X‐ray photoelectron spectroscopy investigation of the effect of gamma‐ray irradiation on MoS <sub>2</sub>
Analysis of Point Defect Distributions in AlGaN/GaN Heterostructures via Spectroscopic Photo Current-Voltage Measurements
Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. <b>105</b>, 172105 (2014)]
Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si
Spectroscopic photo <i>I–V</i> diagnostics of nitride‐based high electron mobility transistor structures on Si wafers