Chungman Yang — Auburn University

Area of research

Electrical and Electronic Engineering · Condensed Matter Physics

Research interest

Research interests include GaN-based semiconductor devices and materials, Semiconductor materials and devices, ZnO doping and properties, and Silicon Carbide Semiconductor Technologies.

Recent publications

Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. <b>105</b>, 172105 (2014)]

Applied Physics Letters 2015cited by 0position: middledoi

Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si

Applied Physics Letters 2014cited by 8position: middledoi

Spectroscopic photo <i>I–V</i> diagnostics of nitride‐based high electron mobility transistor structures on Si wafers

Electronics Letters 2013cited by 7position: middledoi

Grants

No grants ingested yet.

Frequent collaborators

Fei Tong · East China University of Science and Technology3 papers (2013–2015)Min P. Khanal · Auburn University3 papers (2013–2015)A. C. Ahyi · China National Administration of Coal Geology3 papers (2013–2015)Burcu Ozden · Pennsylvania State University3 papers (2013–2015)Minseo Park · Kwangwoon University2 papers (2014–2015)Mobbassar Hassan Sk · University of Cambridge2 papers (2014–2015)Vahid Mirkhani · Auburn University2 papers (2014–2015)— · 1 papers (2013–2013)M. Goforth · University of Arizona1 papers (2013–2013)C. Jiao · Institute of Semiconductors1 papers (2013–2013)Kosala Yapabandara · Auburn University1 papers (2013–2013)Michael C. Hamilton · Google (United States)1 papers (2013–2013)— · 1 papers (2013–2013)M. Park · Auburn University1 papers (2013–2013)Guofu Niu · Auburn University1 papers (2013–2013)

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