Ronald D. Schrimpf

Total-Ionizing-Dose Effects at Ultrahigh Doses in AlGaN/GaN HEMTs

TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Systems engineering and assurance modeling (SEAM): A web-based solution for integrated mission assurance

Electron Transport Properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow><mml:mo>/</mml:mo><mml:mrow><mml:mi>Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math> Transistors

Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO₂/Al₂O₃ Dielectrics

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Influence of LDD Spacers and H⁺Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses

Geometry Dependence of Total-Dose Effects in Bulk FinFETs

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors