Area of research
Electrical and Electronic Engineering · Hardware and Architecture
Research interest
Research focused on Transistor and Optoelectronics, with related work in CMOS, Silicon on insulator, Shallow trench isolation. Notable publications include 'Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors', 'Geometry Dependence of Total-Dose Effects in Bulk FinFETs', and 'Radiation Studies of Spin-Transfer Torque Materials and Devices'.
TID Effects in Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors Irradiated to Ultrahigh Doses
Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors
Electron Transport Properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Al</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:mrow><mml:mo>/</mml:mo><mml:mrow><mml:mi>Ga</mml:mi><mml:mi mathvariant="normal">N</mml:mi></mml:mrow></mml:math> Transistors
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Dielectrics
Geometry Dependence of Total-Dose Effects in Bulk FinFETs
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
Radiation Studies of Spin-Transfer Torque Materials and Devices
A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit
A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface