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Qingchun Zhang

Ningbo University · CN
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Area of research
Electrical and Electronic Engineering · Mechanics of Materials
Research interest
Research interests include Materials science, Trench, Capacitor, Dielectric, Leakage (economics), and Gate dielectric.
h-index
citations
23
works
3
NIH funding
primary concept
email

Recent publications

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures
Nanomaterials 2025cited by 13position: lastdoi
Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors
Materials 2025cited by 8position: lastdoi
Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET
Nanomaterials 2025cited by 2position: lastdoi
Preparation of open porous polycaprolactone microspheres and their applications as effective cell carriers in hydrogel system
Materials Science and Engineering C 2012cited by 36position: firstdoi

Grants

No grants ingested yet.

Frequent collaborators

Hong-Ping Ma · Fudan University3 papers (2025–2025)Yi Shen · Fudan University3 papers (2025–2025)Anfeng Wang · Wuhan Sports University2 papers (2025–2025)Zhenyu Wang · Ningbo University2 papers (2025–2025)Chengxi Ding · Fudan University2 papers (2025–2025)Lin Gu · Fudan University2 papers (2025–2025)Qimin Huang · Fudan University2 papers (2025–2025)Zhaoyang Ye · Ministry of Education of the People's Republic of China1 papers (2012–2012)Ke Tian Tan · National University of Singapore1 papers (2012–2012)Yan Zhang · Ministry of Education of the People's Republic of China1 papers (2012–2012) · 1 papers (2025–2025)Zhiang Bai · Ningbo University1 papers (2025–2025)Meidong Lang · Ministry of Education of the People's Republic of China1 papers (2012–2012)
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