Lin Gu

High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO2/SiO2 Stacked Gate Dielectric in Trench Structures

Band Alignment, Thermal Transport Property, and Electrical Performance of High-Quality β-Ga₂O₃/AlN Schottky Barrier Diode Grown via MOCVD

Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors

Influence of different crystals on the properties of gallium oxide materials and solar blind UV photoelectric detection

Physical and Electrical Properties of Silicon Nitride Thin Films with Different Nitrogen–Oxygen Ratios

Influence of annealing pretreatment in different atmospheres on crystallization quality and UV photosensitivity of gallium oxide films

Mechanism study of low-resistance ohmic contact in Cr/Au electrodes on (100) β-Ga2O3 substrate with rapid thermal annealing

Evaluation of AlN insertion layer on the properties of heterogeneous integrated Ga2O3 films on sapphire

Overview of Silicon Carbide Wafer Defect Types and Inspection Techniques

Investigation of gallium oxide thin film hetero-integrated with bulk diamond via atomic layer deposition

Influence of Rapid Thermal Annealing on the Characteristics of Sn-Doped Ga2O3 Films Fabricated Using Plasma-Enhanced Atomic Layer Deposition

Influence of Nitrogen Annealing Treatment on Optical, Microstructural, and Chemical Properties of Ga₂O₃ Film Grown by Plasma-Enhanced Atomic Layer Deposition

Study on the Surface Structure of N-Doped 4H-SiC Homoepitaxial Layer Dependence on the Growth Temperature and C/Si Ratio Deposited by CVD

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Atomic-Level Sn Doping Effect in Ga2O3 Films Using Plasma-Enhanced Atomic Layer Deposition