← back to search

Haiding Sun

University of Science and Technology of China ·
Area of research
Condensed Matter Physics · Electronic, Optical and Magnetic Materials
Research interest
Research interests include GaN-based semiconductor devices and materials, Ga2O3 and related materials, ZnO doping and properties, and Photocathodes and Microchannel Plates.
h-index
54
citations
8,006
works
248
NIH funding
primary concept
email

Recent publications

A three-terminal light emitting and detecting diode
Nature Electronics 2024cited by 124position: lastdoi
Dual‐Functional Triangular‐Shape Micro‐Size Light‐Emitting and Detecting Diode for On‐Chip Optical Communication in the Deep Ultraviolet Band
Laser & Photonics Review 2024cited by 70position: lastdoi
Miniaturized AlGaN‐Based Deep‐Ultraviolet Light‐Emitting and Detecting Diode with Superior Light‐Responsive Characteristics
Advanced Optical Materials 2024cited by 35position: lastdoi
Solar Hydrogen
Advanced Energy Materials 2023cited by 140position: middledoi
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm
Optics Letters 2021cited by 195position: middledoi
Balancing the Transmittance and Carrier‐Collection Ability of Ag Nanowire Networks for High‐Performance Self‐Powered Ga<sub>2</sub>O<sub>3</sub> Schottky Photodiode
Advanced Optical Materials 2021cited by 65position: middledoi
Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes
Semiconductor Science and Technology 2020cited by 42position: lastdoi
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
Journal of Physics D Applied Physics 2019cited by 146position: lastdoi
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
Optics Express 2019cited by 64position: lastdoi
Phosphor Glass-Coated Sapphire With Moth-Eye Microstructures for Ultraviolet-Excited White Light-Emitting Diodes
IEEE Transactions on Electron Devices 2019cited by 13position: middledoi
Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates
IEEE photonics journal 2017cited by 32position: firstdoi
Deep-UV optical gain in AlGaN-based graded-index separate confinement heterostructure
Optical Materials Express 2015cited by 17position: middledoi
Development of AlGaN-based graded-index-separate-confinement-heterostructure deep UV emitters by molecular beam epitaxy
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2013cited by 38position: firstdoi

Grants

No grants ingested yet.

Frequent collaborators

Huabin Yu · Southwest University7 papers (2019–2024)Muhammad Hammad Memon · Mehran University of Engineering and Technology4 papers (2021–2024)Zhongjie Ren · Changzhou University4 papers (2019–2021)Shibing Long · University of Science and Technology of China4 papers (2019–2021) · 3 papers (2024–2024)Emanuele Francesco Pecora · Stanford University3 papers (2013–2017) · 3 papers (2024–2024)Chao Shen · Fudan University3 papers (2024–2024)Danhao Wang · University of Michigan–Ann Arbor3 papers (2019–2024)Luca Dal Negro · Boston University3 papers (2013–2017)Changqing Chen · Tianjin University of Traditional Chinese Medicine3 papers (2019–2020)Haochen Zhang · Harbin Institute of Technology3 papers (2019–2021)T. D. Moustakas · Boston University3 papers (2013–2017)Chen Huang · King Abdullah University of Science and Technology2 papers (2019–2021)Roberto Paiella · Boston University2 papers (2013–2017) · 2 papers (2019–2020)Sheng Liu · Fudan University2 papers (2024–2024)Dong Li · Fudan University2 papers (2024–2024)Jiangnan Dai · Huazhong University of Science and Technology2 papers (2019–2019)Jian Yin · Central South University of Forestry and Technology2 papers (2013–2017)