Area of research
Condensed Matter Physics · Electronic, Optical and Magnetic Materials
Research interest
Research interests include Materials science, Optoelectronics, Ultraviolet, Sapphire, Photodetector, and Light-emitting diode.
Tellurium/Bismuth Selenide van der Waals Heterojunction for Self‐Driven, Broadband Photodetection and Polarization‐Sensitive Application
Crystalline and optical properties of AlN films with varying thicknesses (0.4-10 µm) grown on sapphire by metalorganic chemical vapor deposition
Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization
Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes
Advantages of AlGaN-based deep-ultraviolet light-emitting diodes with an Al-composition graded quantum barrier
High quality 10.6 <i>μ</i>m AlN grown on pyramidal patterned sapphire substrate by MOCVD
Phosphor Glass-Coated Sapphire With Moth-Eye Microstructures for Ultraviolet-Excited White Light-Emitting Diodes
Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO <sub>2</sub> dielectric interlayer
Anisotropic optical polarization dependence on internal strain in AlGaN epilayer grown on Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N templates
High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement