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Kai Fu

Tongji University · CN
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Area of research
Condensed Matter Physics · Electrical and Electronic Engineering
Research interest
Research interests include GaN-based semiconductor devices and materials, Ga2O3 and related materials, Semiconductor materials and devices, and ZnO doping and properties.
h-index
38
citations
4,411
works
230
NIH funding
primary concept
email

Recent publications

Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO<sub>2</sub> Films via MOCVD
ACS Applied Electronic Materials 2025cited by 13position: lastdoi
A TEM study of MOCVD-grown rutile GeO2 films
Applied Physics Letters 2025cited by 9position: lastdoi
Epitaxial Growth of Ga2O3: A Review
Materials 2024cited by 34position: lastdoi
β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances
Electronics 2024cited by 32position: middledoi
Epitaxial growth of rutile GeO2 via MOCVD
Applied Physics Letters 2024cited by 32position: lastdoi
Growth of GeO<sub>2</sub> on <i>R</i>-Plane and <i>C</i>-Plane Sapphires by MOCVD
ACS Applied Engineering Materials 2024cited by 24position: lastdoi
Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
Applied Physics Letters 2024cited by 16position: middledoi
Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation
IEEE Electron Device Letters 2023cited by 39position: middledoi
GaN-Based Threshold Switching Behaviors at High Temperatures Enabled by Interface Engineering for Harsh Environment Memory Applications
IEEE Transactions on Electron Devices 2023cited by 17position: firstdoi
Electrospinning In0.5Nb24.5O62 nanofibers as a novel anode host with superior lithium storage performance
Electrochimica Acta 2023cited by 11position: middledoi
Investigation of vertical GaN-on-GaN <i>p</i>–<i>n</i> diode with regrown <i>p</i>-GaN for operation in Venus and other extreme environments
Applied Physics Letters 2023cited by 10position: middledoi
NiSb/nitrogen-doped carbon derived from Ni-based framework as advanced anode for lithium-ion batteries
Journal of Colloid and Interface Science 2022cited by 50position: middledoi
Storage degradation mechanism of layered Ni-rich oxide cathode material LiNi0.8Co0.1Mn0.1O2
Electrochimica Acta 2022cited by 41position: middledoi
GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
IEEE Electron Device Letters 2022cited by 35position: middledoi
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part I
IEEE Transactions on Electron Devices 2021cited by 89position: middledoi
Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II
IEEE Transactions on Electron Devices 2021cited by 83position: middledoi

Grants

Conference: 2024 Defects in Semiconductors GRC/GRS
NSF2414677$5,0002024–2025PIRePORTER
Semiconductor electron-nuclear spin qubits with optical access
NSF2212017$378,7972022–2026PIRePORTER
EAGER: PHY-GRS: A Diamond Quantum Control Testbed
NSF2233120$298,1852022–2023PIRePORTER
GRC Defects in Semiconductors: Defect Formation, Characterization, Control and Utilization
NSF2023837$5,0002020–2023PIRePORTER
QLCI-CG: Institute for Hybrid Quantum Systems
NSF1936932$147,0092019–2023PIRePORTER
Donor Electron Spins in Direct Bandgap Semiconductors for Quantum Networks
NSF1820614$428,7252018–2023PIRePORTER
A Hybrid Photonics Device for Efficient Quantum Entanglement
NSF1807566$401,5412018–2022PIRePORTER
Student Travel Support for the 11th Workshop on the Principles and Applications of Control in Quantum Systems, July 11-17, 2017 in Seattle, WA.
NSF1743298$5,0002017–2018PIRePORTER
EFRI ACQUIRE: An Integrated Quantum Communication Transmission Node
NSF1640986$2,027,5002016–2021PIRePORTER
Instrument Development: A nanoscale, unbleachable orientation and position sensor for biophysical imaging
NSF1607869$390,7852016–2020PIRePORTER
An integrated photonic device in diamond to generate quantum entanglement, a computational resource for quantum information processing
NSF1506473$378,0002015–2018PIRePORTER
EAGER: GaP-diamond photonic-spin devices for scalable quantum information processing
NSF1343902$160,0002013–2015PIRePORTER
CAREER: A 'holistic' approach toward scalable quantum optical networks in semiconductors
NSF1150647$783,5272012–2018PIRePORTER

Frequent collaborators

Yuji Zhao · Iowa State University9 papers (2021–2024)Tomás Palacios · Massachusetts Institute of Technology6 papers (2021–2024)Houqiang Fu · Iowa State University5 papers (2021–2024)Hunter D. Ellis · University of Utah5 papers (2024–2025)Imteaz Rahaman · Texas State University5 papers (2024–2025) · 4 papers (2023–2024)Mengyang Yuan · Massachusetts Institute of Technology4 papers (2022–2024)Qingyun Xie · Massachusetts Institute of Technology4 papers (2022–2024)John Niroula · Massachusetts Institute of Technology3 papers (2022–2024)Yu Zhou · Georgia Institute of Technology3 papers (2022–2023)Cheng Chang · Fudan University3 papers (2023–2024)Mingru Su · Jiangsu University3 papers (2022–2023)Ziyi He · Iowa State University3 papers (2023–2024)Aichun Dou · Jiangsu University3 papers (2022–2023)Nadim Chowdhury · Massachusetts Institute of Technology3 papers (2022–2024)Yunjian Liu · Jiangsu University3 papers (2022–2023)Mingfei Xu · Oak Ridge National Laboratory3 papers (2023–2024)Debbie G. Senesky · Palo Alto University2 papers (2023–2024)Dinusha Herath Mudiyanselage · Iowa State University2 papers (2024–2024) · 2 papers (2023–2023)
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