Nadim Chowdhury

High temperature stability of regrown and alloyed Ohmic contacts to AlGaN/GaN heterostructure up to 500 °C

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation

Highly Scaled GaN Complementary Technology on a Silicon Substrate

Tungsten-Gated GaN/AlGaN <i>p</i>-FET With I_max &gt; 120 mA/mm on GaN-on-Si

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

Regrowth-Free GaN-Based Complementary Logic on a Si Substrate

Barrier heights and Fermi level pinning in metal contacts on p-type GaN

p-Channel GaN Transistor Based on p-GaN/AlGaN/GaN on Si

The 2018 GaN power electronics roadmap

Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit

720-V/0.35-m&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\Omega \cdot$ &lt;/tex-math&gt; &lt;/inline-formula&gt;cm²Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers

Materials and processing issues in vertical GaN power electronics

GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics