Area of research
Condensed Matter Physics · Electrical and Electronic Engineering
Research interest
Research interests include Materials science, Optoelectronics, Transistor, Diode, Breakdown voltage, and Schottky diode.
The 2018 GaN power electronics roadmap
Large Area 1.2 kV GaN Vertical Power FinFETs with a Record Switching Figure-of-Merit
AlN metal–semiconductor field-effect transistors using Si-ion implantation
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Materials and processing issues in vertical GaN power electronics
1200 V GaN vertical fin power field-effect transistors
Trench formation and corner rounding in vertical GaN power devices
High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes
Novel GaN trench MIS barrier Schottky rectifiers with implanted field rings
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
GaN-on-Si Vertical Schottky and p-n Diodes
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
A Technology Overview of the PowerChip Development Program
3000-V 4.3-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ InAlN/GaN MOSHEMTs With AlGaN Back Barrier