Area of research
Materials Chemistry · Electrical and Electronic Engineering
Research interest
Research interests include Advanced Memory and Neural Computing, 2D Materials and Applications, Ferroelectric and Negative Capacitance Devices, and Graphene research and applications.
Tellurium nanowire retinal nanoprosthesis improves vision in models of blindness
Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection
A full-featured 2D flash chip enabled by system integration
Transistor engineering based on 2D materials in the post-silicon era
Non-volatile 2D MoS2/black phosphorus heterojunction photodiodes in the near- to mid-infrared region
Two-dimensional materials for future information technology: status and prospects
Non-volatile rippled-assisted optoelectronic array for all-day motion detection and recognition
Neuromorphic electro-stimulation based on atomically thin semiconductor for damage-free inflammation inhibition
A scalable integration process for ultrafast two-dimensional flash memory
Two‐Dimensional MoS<sub>2</sub>‐Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam Irradiation
Contact engineering for temperature stability improvement of Bi-contacted MoS2 field effect transistors
An ultrafast bipolar flash memory for self-activated in-memory computing
An Optoelectronic Synapse Based on Two‐Dimensional Violet Phosphorus Heterostructure
2D semiconductors for specific electronic applications: from device to system
An application-specific image processing array based on WSe2 transistors with electrically switchable logic functions
All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition
Logic gates based on neuristors made from two-dimensional materials
A Steep-Slope MoS<sub>2</sub>/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current
Controllable Doping in 2D Layered Materials
Two-dimensional materials for next-generation computing technologies
Electronics based on two-dimensional materials: Status and outlook
A Logic‐Memory Transistor with the Integration of Visible Information Sensing‐Memory‐Processing
Small footprint transistor architecture for photoswitching logic and in situ memory
Time‐Tailoring van der Waals Heterostructures for Human Memory System Programming
Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications
Charge‐Trap Memory Based on Hybrid 0D Quantum Dot–2D WSe<sub>2</sub> Structure
Tunable SnSe<sub>2</sub>/WSe<sub>2</sub> Heterostructure Tunneling Field Effect Transistor
Ferroelectric FET for nonvolatile memory application with two-dimensional MoSe <sub>2</sub> channels
Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe<sub>2</sub>