Area of research
Materials Chemistry · Electronic, Optical and Magnetic Materials
Research interest
Research focused on Optoelectronics and Doping, with related work in Nanowire, Responsivity, Electron mobility. Notable publications include 'P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product', 'Recent progress of Ga2O3-based gas sensors', and 'Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films'.
Fabrication of Highly Anisotropic Large‐Area <i>β</i>‐Ga<sub>2</sub>O<sub>3</sub> Thin Films via Crystal Orientation Engineering for Multifunctional Solar‐Blind Polarization‐Sensitive Photodetectors
Low-power optoelectronic synaptic devices with ZnMgO in deep-ultraviolet encryption computation
Recent advancement and perspective of epitaxial growth and doping of <i>β</i>-Ga2O3 thin films for power electronics
High-performance formaldehyde gas sensors based on Au/Pd bimetal decorated β-Ga2O3 nanorods
Enhanced Carrier Transport and Photoresponse in Ga <sub>2</sub> O <sub>3</sub> Solar‐Blind Photodetectors via Se‐Induced Valence Band Modulation
Full β-Ga2O3 films-based p-n homojunction
N-doped β-Ga2O3/Si-doped β-Ga2O3 linearly-graded p-n junction by a one-step integrated approach
Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging
(AlxGa1-x)2O3-based materials: Growth, properties, and device applications
Recent progress of Ga2O3-based gas sensors
Exploring the feasibility and conduction mechanisms of P-type nitrogen-doped β-Ga<sub>2</sub>O<sub>3</sub> with high hole mobility
Energy-driven multi-step structural phase transition mechanism to achieve high-quality p-type nitrogen-doped β-Ga2O3 films
P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product
Ultrahigh carrier mobilities and high thermoelectric performance at room temperature optimized by strain-engineering to two-dimensional aw-antimonene
Nanowire‐Seeded Growth of Single‐Crystalline (010) β‐Ga<sub>2</sub>O<sub>3</sub> Nanosheets with High Field‐Effect Electron Mobility and On/Off Current Ratio
Self-consistent growth of single-crystalline (201)β-Ga<sub>2</sub>O<sub>3</sub>nanowires using a flexible GaN seed nanocrystal