Fengyi Jiang

Flexible 2 × 2 multiple access visible light communication system based on an integrated parallel GaN/InGaN micro-photodetector array module

Key Technologies for High-Speed Si-Substrate LED Based Visible Light Communication

31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

15.26Gb/s Si-substrate GaN high-speed visible light photodetector with super-lattice structure

Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10  Gbps visible light communication

Si-substrate LEDs with multiple superlattice interlayers for beyond 24  Gbps visible light communication

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

Wide bandgap and ultra-wide bandgap semiconductors

Phosphor-free, color-mixed, and efficient illuminant: Multi-chip packaged LEDs for optimizing blue light hazard and non-visual biological effects

Enhance the efficiency of green-yellow LED by optimizing the growth condition of preparation layer

Effect of Barrier Temperature on Photoelectric Properties of GaN-Based Yellow LEDs*

Comparison of nonlinear equalizers for high-speed visible light communication utilizing silicon substrate phosphorescent white LED

Large-coverage underwater visible light communication system based on blue LED employing equal gain combining with integrated PIN array reception

Study on the performance of InGaN-based green LED by designing different preparing layers

Effects of V-pits covering layer position on the optoelectronic performance of InGaN green LEDs

GaN LEDs on Si Substrate

Effect of AlGaN interlayer in bottom quantum barriers on efficiency enhancement of InGaN green light-emitting diodes

High speed underwater visible light communication system based on LED employing maximum ratio combination with multi-PIN reception

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

10.72Gb/s Visible Light Communication System Based On Single Packaged RGBYC LED Utilizing QAM-DMT Modulation With Hardware Pre-Equalization

Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)

Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates

Effect of V-shaped Pit area ratio on quantum efficiency of blue InGaN/GaN multiple-quantum well light-emitting diodes

Hole injection from the sidewall of V-shaped pits into <i>c</i>-plane multiple quantum wells in InGaN light emitting diodes

A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices

Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes

High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate