Jianli Zhang

Visual and non-visual effects of the phosphor-free white LED lamps rich in the 535–589-nm yellow-green light

Flexible 2 × 2 multiple access visible light communication system based on an integrated parallel GaN/InGaN micro-photodetector array module

Construction and assessment of a fire risk index system for typical grasslands in Xinjiang, China

Key Technologies for High-Speed Si-Substrate LED Based Visible Light Communication

31.38 Gb/s GaN-based LED array visible light communication system enhanced with V-pit and sidewall quantum well structure

Rationally incorporated SnO2/SnS2 nanoparticles on sulfur-doped graphene aerogels for high-performance lithium/sodium-ion batteries

15.26Gb/s Si-substrate GaN high-speed visible light photodetector with super-lattice structure

Si-substrate vertical-structure InGaN/GaN micro-LED-based photodetector for beyond 10  Gbps visible light communication

Phosphor-Free Golden Light LED Array for 5.4-Gbps Visible Light Communication Using MIMO Tomlinson-Harashima Precoding

3.76-Gbps yellow-light visible light communication system over 1.2 m free space transmission utilizing a Si-substrate LED and a cascaded pre-equalizer network

Growth of KAlF₄ and Na₅Al₃F₁₄ Aluminum Fluoride Single Crystals by Bridgman Method

Theoretical investigation of high coverage water adsorption on Co and Ni doped γ-Al2O3 surface

Si-substrate LEDs with multiple superlattice interlayers for beyond 24  Gbps visible light communication

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

Facile fabrication of microlens array on encapsulation layer for enhancing angular color uniformity of color-mixed light-emitting diodes

Multi-color emission of Dy3+/Eu3+ co-doped LiLuF4 single crystals for white light-emitting devices

Multiple occupation sites of Bi3+ and full color luminescence tuning through co-doped Eu3+ in NaY9Si6O26 phosphors

Enhance the efficiency of green-yellow LED by optimizing the growth condition of preparation layer

Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates

Photoluminescence properties of Tm3+/Tb3+/Sm3+ tri-doped Na5Y9F32 single crystal with high thermal stability for white light-emitting diodes

Effect of Barrier Temperature on Photoelectric Properties of GaN-Based Yellow LEDs*

Comparison of nonlinear equalizers for high-speed visible light communication utilizing silicon substrate phosphorescent white LED

Study on the performance of InGaN-based green LED by designing different preparing layers

GaN LEDs on Si Substrate

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer

Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)

Opto-thermophoretic assembly of colloidal matter

Highly efficient up-conversion luminescence in Er3+/Yb3+ co-doped Na5Lu9F32 single crystals by vertical Bridgman method

Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates