Area of research
Electrical and Electronic Engineering · Materials Chemistry
Research interest
Research focused on Silicene and Hydrogen, with related work in Germanene, Amorphous solid, Trapping. Notable publications include 'Vibrational properties of silicene and germanene', 'First-principles study of strained 2D MoS2', and 'Two-dimensional hexagonal tin: ab initio geometry, stability, electronic structure and functionalization'.
Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors
Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
Hole-Doped 2D InSe for Spintronic Applications
Advances in SiCN-SiCN Bonding with High Accuracy Wafer-to-Wafer (W2W) Stacking Technology
Control of TiN oxidation upon atomic layer deposition of oxides
Thermally stable integrated Se-based OTS selectors with >20 MA/cm<sup>2</sup> current drive, >3.10<sup>3</sup> half-bias nonlinearity, tunable threshold voltage and excellent endurance
Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
Intrinsic point defects in buckled and puckered arsenene: a first-principles study
Point defects in MoS 2 : Comparison between first-principles simulations and electron spin resonance experiments
Intrinsic electron traps in atomic-layer deposited HfO2 insulators
Deep electron and hole polarons and bipolarons in amorphous oxide
Topological to trivial insulating phase transition in stanene
Hydrogen-Induced Rupture of Strained Si─O Bonds in Amorphous Silicon Dioxide
Theoretical models of hydrogen-induced defects in amorphous silicon dioxide
Defect-induced bandgap narrowing in low-k dielectrics
Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2
Two-dimensional hexagonal tin: <i>ab initio</i> geometry, stability, electronic structure and functionalization
Nature of intrinsic and extrinsic electron trapping in SiO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
On the microscopic structure of hole traps in pMOSFETs
The origin of white luminescence from silicon oxycarbide thin films
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
First-principles electronic functionalization of silicene and germanene by adatom chemisorption
Vibrational properties of epitaxial silicene layers on (111) Ag
Vibrational properties of silicene and germanene
First-principles study of strained 2D MoS2
The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance
Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories