Michel Houssa

Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study

Hole-doping induced ferromagnetism in 2D materials

Advanced DFT–NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS₂/WSe₂ van der Waals Heterojunction TFET and WTe₂/WS₂ Metal/Semiconductor Contact

Hole-Doped 2D InSe for Spintronic Applications

Buckled two-dimensional Xene sheets

Intrinsic point defects in buckled and puckered arsenene: a first-principles study

Silicene on non-metallic substrates: Recent theoretical and experimental advances

Point defects in MoS 2 : Comparison between first-principles simulations and electron spin resonance experiments

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Topological to trivial insulating phase transition in stanene

Silicene: a review of recent experimental and theoretical investigations

Band alignment at interfaces of few-monolayer MoS2 with SiO2 and HfO2

Two-dimensional hexagonal tin: <i>ab initio</i> geometry, stability, electronic structure and functionalization

Engineering the electronic properties of silicene by tuning the composition of MoX ₂ and GaX (X = S,Se,Te) chalchogenide templates

Two‐Dimensional Si Nanosheets with Local Hexagonal Structure on a MoS₂ Surface

An electric field tunable energy band gap at silicene/(0001) ZnS interfaces

A Thermally Stable and High-Performance 90-nm ${\rm Al}_{2}{\rm O}_{3}\backslash{\rm Cu}$-Based 1T1R CBRAM Cell

First-principles electronic functionalization of silicene and germanene by adatom chemisorption

Vibrational properties of epitaxial silicene layers on (111) Ag

Vibrational properties of silicene and germanene

First-principles study of strained 2D MoS2

Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories